iProceeding of the 8 th Asia-Pacific Physics Conference, 2000

Abstract

The microstrueture of a series of Si-rich a-Si:C:H films prepared by dc magnetron sputtering at various carbon (and hydrogen) concentrations was studied by infrared absorption, hydrogen effusion and hydrogen/deuterium interdiffusion experiments. All three methods show the presence of compact material up to a carbon concentration of about 25 at.%, i.e. up to a higher carbon concentration than observed for typical plasma-grown a-Si:C:H films. At carbon concentrations exceeding 25 at.%, the material exhibits a void-rich structure attributed to the presence of hydrogen concentrations exceeding about 1.0−1.5 ×10²cm⁻³.

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