Abstract

The microstructure of dc sputtered amorphous silicon carbon (a-Si:C:H) films have been studied using infrared absorption, hydrogen effusion as well as secondary ion mass spectroscopy (SIMS) profiling of hydrogen-deuterium (H/D) inter-diffusion measurements. A comparison of the three methods shows the presence of a structural transition at a carbon concentration of about 25 at.% and it is attributed to hydrogen-induced void formation. Effusion measurements of implanted inert gases suggest giving information about sizes of microstructure.

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