Abstract

The influence of dopant and the microstructure on hydrogen bonding in doped and compensated laser crystallized polycrystalline silicon (poly-Si) films were investigated using Raman backscattering spectrometry. With increasing boron and phosphorous concentration, the LO-TO phonon line in doped as well as in compensated films shifts to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. Doping results also in significant changes of hydrogen bonding configurations.

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