Effusion measurements of implanted inert gases suggest giving information about sizes of microstructure.
Jurnal Ilmiah
However, it is also conceivable that these states are only induced by the illumination.
According to Raman measurements the amount of hydrogen accommodated in large clusters increases with increasing doping concentration and after laser crystallization.
Our results suggest that effusion of implanted inert gas atoms is a useful method for microstructure characterisation of a-Si:C:H films.
The results from ESR measurements are well supported by the results obtained from Infrared absorption spectroscopy and thermal analysis measurements.
Nanocrystalline Cu-doped ZnO particles were synthesized by the co-precipitation method.
Overall, even the values of energy is different, but an implicit solvent pro-vides the similar result (HPAI complex has higher activity than LPAI for both systems) in characterization of pathogenic virus neuramini-dase activity.
The effect of phonons and backbone disorder on electronic transport in DNA molecules is studied.
The correlation between the structural and magnetic properties as a function of the TM dopant is discussed.
ESR results indicate the presence of Fe in both valence states Fe 2 and Fe 3.